Micron Technology DRAM SDRAMMobile-, Part #: MT40A1G16KD-062E:E | Dynamic random access memory | DEX 1110 W 7 cm-kg (5 inches-lbs)

7 cm-kg (5 inches-lbs)

Bundle of 10 4 GB USB Flash Drive

For a typical reference voltage of 5V

Xiilnx FPGA Part #XCKU5P-2SFVB784E

Micron Technology DRAM SDRAMMobile-, Part #: MT40A1G16KD-062E:E | Dynamic random access memory | DEX 1110 W 7 cm-kg (5 inches-lbs)Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G16KD 062E: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O TC maximum up to 95C 64ms, 8192 cycle refresh up to 85C 32ms, 8192 cycle refresh at >85C to 95C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe