Micron Technology DRAM SDRAM, Part #: MT40A256M16LY-062E AUT:F TR | Dynamic random access memory | DEX 217-XCF01SVOG20C 498137-001

498137-001

SZNUP2105LT1G

Detailed Description: Bipolar (BJT) Transistor PNP 60 V 5 A 150MHz 15 W Surface Mount DPAK

Configurable TDP-down 25 W

Micron Technology DRAM SDRAM, Part #: MT40A256M16LY-062E AUT:F TR | Dynamic random access memory | DEX 217-XCF01SVOG20C 498137-001Micron Technology DRAM , Part #: MT40A256M16LY 062E AUT: F TR features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh maximum interval time at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 96C to 105C 8ms at 106C to 125C 16 internal banks ( x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch