Micron Technology DRAM SDRAM, Part #MT41K512M16VRP-107 IT:P TR | Dynamic random access memory | DEX 13"-14" • Cascadable for Storing Longer

• Cascadable for Storing Longer or Multiple Bitstreams

5CB0S57342

The LPS25HB is available in a full-mold

and AES key

Micron Technology DRAM SDRAM, Part #MT41K512M16VRP-107 IT:P TR | Dynamic random access memory | DEX 13"-14" • Cascadable for Storing LongerThe 8Gb (TwinDie) DDR3L SDRAM (1. 35V) uses two Micron 4Gb DDR3L SDRAM x8 die for a 2 byte x16 device in one package. Features Uses two x8, 4Gb Micron die to make one x16 package Single rank TwinDie One external ZQ ball and one internal ZQ connected to VSSQ through an embedded serial resistor VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture