Micron Technology DRAM SDRAM-DDR4, Part #: MT47H128M16RT-25E:C TR | Dynamic random access memory | DEX Nichicon Approximate Dimensions (WxDxH) 4 in

Approximate Dimensions (WxDxH) 4 in x 5

SKU : CPQ:442038-001

Xilinx Field Programmable Gate Array Part #XCKU9P-L1FFVE900I

46-219465P1

Micron Technology DRAM SDRAM-DDR4, Part #: MT47H128M16RT-25E:C TR | Dynamic random access memory | DEX Nichicon Approximate Dimensions (WxDxH) 4 inMicron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E: C TR features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ